ELECTROLESS DEPOSITION OF SNO2 AND ANTIMONY DOPED SNO2 FILMS

被引:27
作者
RAVIENDRA, D
SHARMA, JK
机构
[1] St. John's Coll, Dep of Physics,, Agra, India, St. John's Coll, Dep of Physics, Agra, India
关键词
ELECTROLESS PLATING - FILMS - Metallic - SEMICONDUCTOR MATERIALS;
D O I
10.1016/0022-3697(85)90097-6
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thin polycrystalline films of SnO//2 and antimony doped SnO//2 have been prepared by simple economic electroless deposition technique. The transmittance in the visible range and the reflectance in the IR range for SnO//2 films are approximately 80% and approximately 70%, respectively, with resistivity approximately 10** minus **2 OMEGA cm. On the other hand, antimony doped SnO//2 films have transmittance in the visible range and reflectance in the IR range, as good as approximately 86% and approximately 83%, respectively, with resistivity as low as approximately 10** minus **3 omega cm. By vacuum annealing, the resistivity of both types of films has been brought down as low as approximately 10** minus **3 and approximately 10** minus **4 omega cm, respectively.
引用
收藏
页码:945 / 950
页数:6
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