SECONDARY GRAIN-GROWTH IN THIN-FILMS OF SEMICONDUCTORS - THEORETICAL ASPECTS

被引:236
作者
THOMPSON, CV
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10.1063/1.336194
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O59 [应用物理学];
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页码:763 / 772
页数:10
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共 36 条
[1]   EFFECT OF IMPURITIES ON THE GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS [J].
ANGELUCCI, R ;
SEVERI, M ;
SOLMI, S .
MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) :235-245
[2]   CORRELATIONS FOR DIFFUSION CONSTANTS [J].
BROWN, AM ;
ASHBY, MF .
ACTA METALLURGICA, 1980, 28 (08) :1085-1101
[3]  
CAHN RW, 1970, PHYSICAL METALLURGY, pCH19
[4]  
Christian JW, 1975, THEORY TRANSFORMATIO
[5]  
Daey Ouwens C., 1975, APPL PHYS LETT, V26, P569, DOI [10.1063/1.87995, DOI 10.1063/1.87995]
[6]   STUDY OF SI SELF-DIFFUSION BY NUCLEAR TECHNIQUES [J].
DEMOND, FJ ;
KALBITZER, S ;
MANNSPERGER, H ;
DAMJANTSCHITSCH, H .
PHYSICS LETTERS A, 1983, 93 (09) :503-506
[7]   HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].
DONOVAN, EP ;
SPAEPEN, F ;
TURNBULL, D ;
POATE, JM ;
JACOBSON, DC .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700
[8]  
Dunn C.G., 1966, RECRYSTALLIZATION GR
[9]  
FOSTER K, 1963, T METALL SOC AIME, V227, P185
[10]  
FROST HB, UNPUB