ELECTRONIC EXCITATIONS ON GEXSI1-X(100)(2X1)

被引：4

作者：

FARRELL, HH

BROUGHTON, JQ

SCHAEFER, JA

BEAN, JC

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

[2] MONTANA STATE UNIV,SURFACE SCI RES CTR,BOZEMAN,MT 59717

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.573483

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：123 / 126

页数：4

共 22 条

[1] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY
BEAN, JC
SHENG, TT
FELDMAN, LC
FIORY, AT
LYNCH, RT
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104
[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[3] BROUGHTON JQ, UNPUB
[4] DIFFRACTION OF HE AT THE RECONSTRUCTED SI(100) SURFACE
CARDILLO, MJ
BECKER, GE
[J]. PHYSICAL REVIEW B, 1980, 21 (04): : 1497 - 1510
[5] SURFACE-STATE OPTICAL-ABSORPTION ON THE CLEAN SI(100)2X1 SURFACE
CHABAL, YJ
CHRISTMAN, SB
CHABAN, EE
YIN, MT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 1241 - 1242
[6] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296
[7] CULBERTSON RJ, UNPUB
[8] ELECTRONIC EXCITATIONS ON SI(100)(2X1)
FARRELL, HH
STUCKI, F
ANDERSON, J
FRANKEL, DJ
LAPEYRE, GJ
LEVINSON, M
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 721 - 725
[9] FARRELL HH, UNPUB PHYS REV B
[10] FARRELL HH, UNPUB