DOSE ENHANCEMENT EFFECTS IN SEMICONDUCTOR-DEVICES

被引:32
作者
LONG, DM
MILLWARD, DG
WALLACE, J
机构
关键词
D O I
10.1109/TNS.1982.4336482
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1980 / 1984
页数:5
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共 31 条
  • [1] X-RAY-FLUORESCENCE YIELDS, AUGER, AND COSTER-KRONIG TRANSITION PROBABILITIES
    BAMBYNEK, W
    SWIFT, CD
    CRASEMANN, B
    FREND, HU
    RAO, PV
    PRICE, RE
    MARK, H
    FINK, RW
    [J]. REVIEWS OF MODERN PHYSICS, 1972, 44 (04) : 716 - +
  • [2] BERGER MJ, 1964, NBS SP3012
  • [3] BERGER MJ, 1968, NBS98369837 REP
  • [4] BERGER MJ, NATIONAL RES COUNCIL, V1133
  • [5] BERGER RA, 1975, IEEE T NUC SCI, V22, P2586
  • [6] Bethe H. A., 1938, P AM PHILOS SOC, V78, P573
  • [7] ALGORITHM FOR ENERGY DEPOSITION AT INTERFACES
    BURKE, EA
    GARTH, JC
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1838 - 1843
  • [8] CHADSEY WL, 1975, ADA018055
  • [9] CHADSEY WL, 1977, ADB023354C
  • [10] CHADSEY WL, 1976, ADA026248