COMPLEX-PLANE ANALYSIS OF TRAPPING PHENOMENA IN ZINC-OXIDE BASED VARISTOR GRAIN-BOUNDARIES

被引：96

作者：

ALIM, MA ^{[1
]}

SEITZ, MA ^{[1
]}

HIRTHE, RW ^{[1
]}

机构：

[1] MARQUETTE UNIV,COLL ENGN,MILWAUKEE,WI 53233

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.341176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2337 / 2345

页数：9

相关论文

共 32 条

[1] Dispersion and absorption in dielectrics I. Alternating current characteristics
Cole, KS
Cole, RH
[J]. JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (04) : 341 - 351
[2] BULK ELECTRON TRAPS IN ZINC-OXIDE VARISTORS
CORDARO, JF
SHIM, Y
MAY, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4186 - 4190
[3] SERIES EQUIVALENT CIRCUIT REPRESENTATION OF SIO2-SI INTERFACE AND OXIDE TRAP STATES
EATON, DH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 841 - 846
[4] EINZINGER R, 1982, MATER RES SOC S P, V5, P343
[5] USE OF COMPLEX CONDUCTIVITY IN THE REPRESENTATION OF DIELECTRIC PHENOMENA
GRANT, FA
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (01) : 76 - 80
[6] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS
HUTSON, AR
[J]. PHYSICAL REVIEW, 1957, 108 (02): : 222 - 230
[7] ELECTRONIC PROPERTIES OF ZNO
HUTSON, AR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 467 - 472
[8] JONSCHER AK, 1983, DIELECTRIC RELAXATIO, P80
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] LOW-TEMPERATURE AC PROPERTIES OF METAL-OXIDE VARISTORS
LEVINSON, LM
PHILIPP, HR
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6142 - 6146

← 1 2 3 4 →