HUMIDITY-SENSITIVE OSCILLATOR FABRICATED IN DOUBLE POLY CMOS TECHNOLOGY

被引：7

作者：

BALTES, H

CHARBON, E

PARAMESWARAN, M

ROBINSON, AM

机构：

[1] UNIV ALBERTA,DEPT ELECT ENGN,EDMONTON T6G 2G7,ALBERTA,CANADA

[2] UNIV ALBERTA,ALBERTA MICROELECTR CTR,EDMONTON T6G 2G7,ALBERTA,CANADA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1990年 / 1卷 / 1-6期

关键词：

D O I：

10.1016/0925-4005(90)80246-V

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We have developed a humidity-sensitive multivibrator fabricated in standard double poly CMOS technology. The output frequency of the multivibrator is modulated by the ambient relative humidity (r.h.) and shows a sensitivity of at least 10 Hz/%r.h. The sensor element, which is an integral part of the circuit, is based on an interdigitated lateral capacitance structure formed by the polysilicon layers of the CMOS process. © 1990.

引用

页码：441 / 445

页数：5

共 6 条

[1] Allen P. E., 1987, CMOS ANALOG CIRCUIT
[2] GIACHINO JM, 1987, SENSOR ACTUATOR, V10, P239
[3] DESIGN OF A CMOS OSCILLATOR WITH MAGNETIC-FIELD FREQUENCY-MODULATION
NATHAN, A
MCKAY, IA
FILANOVSKY, IM
BALTES, HP
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (02) : 230 - 232
[4] A CAPACITIVE HUMIDITY SENSOR BASED ON CMOS TECHNOLOGY WITH ADSORBING FILM
PARAMESWARAN, M
BALTES, HP
BRETT, MJ
FRASER, DE
ROBINSON, AM
[J]. SENSORS AND ACTUATORS, 1988, 15 (04): : 325 - 335
[5] RUSKIN RE, 1965, HUMIDITY MOISTURE ME, V1
[6] HUMIDITY SENSORS - PRINCIPLES AND APPLICATIONS
YAMAZOE, N
SHIMIZU, Y
[J]. SENSORS AND ACTUATORS, 1986, 10 (3-4): : 379 - 398

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