CHARACTERISTICS OF N-INSB HOT-ELECTRON SUBMILLIMETER DETECTOR

被引：6

作者：

SAKAI, K ^{[1
]}

SAKAI, J ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT APPL PHYS,SUITA,OSAKA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.15.1335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1335 / 1341

页数：7

共 14 条

[1]

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[2]

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[5] SCATTERING MECHANISMS IN INDIUM ANTIMONIDE AT LOW TEMPERATURES [J].

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[6]

KOGAN SM, 1963, SOV PHYS-SOL STATE, V4, P1386

[7]

Otsuka Y., 1963, JPN J APPL PHYS, V2, P574

[8] INDIUM ANTIMONIDE SUBMILLIMETER PHOTOCONDUCTIVE DETECTORS [J].

PUTLEY, EH .

APPLIED OPTICS, 1965, 4 (06) :649-&

[9] IMPURITY PHOTOCONDUCTIVITY IN N-TYPE INSB [J].

PUTLEY, EH .

[10] DETECTION OF SUB-MM RADIATION [J].

PUTLEY, EH .