DOUBLE RIDLEY-WATKINS-HILSUM-GUNN EFFECT IN COMPENSATED GAAS

被引：6

作者：

XU, JM ^{[1
]}

SHUR, M ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

D O I：

10.1016/0038-1101(88)90352-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：607 / 610

页数：4

共 13 条

[1] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT
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FAWCETT, W
HILSUM, C
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[2] DESIGN CRITERIA FOR GAAS-MESFETS RELATED TO STATIONARY HIGH-FIELD DOMAINS
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TIWARI, S
SHUR, MS
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 383 - 389
[3] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
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BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[4] Gunn J. B., 1965, INT J SCI TECHNOL, V46, P43
[5] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
[6] SUBTHRESHOLD ELECTRON VELOCITY-FIELD CHARACTERISTICS OF GAAS AND IN0.53GA0.47AS
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STILLMAN, GE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2295 - 2298
[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS
HILSUM, C
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &
[8] ELECTRON-TRANSPORT PROPERTIES IN GAAS AT HIGH ELECTRIC-FIELDS
POZELA, J
REKLAITIS, A
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (09) : 927 - 933
[9] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS
RIDLEY, BK
WATKINS, TB
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &
[10] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD
RUCH, JG
FAWCETT, W
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3843 - &

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