SILICON EPITAXIAL-GROWTH ON GERMANIUM USING AN SI2H6 LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUE

被引：8

作者：

FUJINAGA, K

TAKAHASHI, Y

ISHII, H

HIROTA, S

KAWASHIMA, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：225 / 228

页数：4

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