THE AG PHOTODOPING MECHANISM IN AS2S3

被引:10
作者
LAVINE, JM [1 ]
DUMFORD, SA [1 ]
机构
[1] UNIV MASSACHUSETTS,CTR ADV MAT,LOWELL,MA 01854
关键词
D O I
10.1063/1.354301
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the number of photons/cm2 over the energy range 1.95 to 3.35 eV, required to form a negative-relief image in 2000 angstrom films of As2S3 using 100 angstrom films of evaporated Ag, Ag2Te, Ag2Se, and AgBr. We have observed sensitivity below the band gap of As2S3 in all cases. We have observed an increase in sensitivity by several orders of magnitude with increase of photon energy between 1.95 and 3.35 eV. The sensitivity decreases from Ag to the semimetals Ag2Te and Ag2Se to the wide band gap AgBr by the ratio 1:50:2500 at 2.4 eV. Assuming an internal photoemission model as proposed by Goldschmidt and Rudman, we extract barrier heights of 1.71, 2.10, 2.22 and 2.42 eV for Ag, Ag2Te, Ag2Se, and AgBr.
引用
收藏
页码:5135 / 5137
页数:3
相关论文
共 9 条
[1]  
CROWELL CR, 1967, HOT ELECTRON TRANSPO, V4, P325
[2]   THE AG/AS2S3 PHOTODOPING MECHANISM - PHOTON-ABSORPTION [J].
DUMFORD, SA ;
LAVINE, JM ;
LIS, SA .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2768-2770
[3]  
GOLDBERG GM, COMMUNICATION
[4]   KINETICS OF PHOTO-DISSOLUTION OF AG IN AMORPHOUS AS2S3 FILMS [J].
GOLDSCHMIDT, D ;
RUDMAN, PS .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 22 (02) :229-243
[5]   PHOTODOPING OF AMORPHOUS CHALCOGENIDES BY METALS [J].
KOLOBOV, AV ;
ELLIOTT, SR .
ADVANCES IN PHYSICS, 1991, 40 (05) :625-684
[6]  
KOSTYSHIN MT, 1966, FIZ TVERD TELA, V8, P451
[7]  
LAVINE JM, 1982, P S INORGANIC RESIST, P265
[8]   AG PHOTODOPING OF AMORPHOUS CHALCOGENIDES [J].
LIS, SA ;
LAVINE, JM .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :675-677
[9]   PHOTOELECTRIC EMISSION FROM THE VALENCE BAND IN AGBR [J].
TAFT, EA ;
PHILIPP, HR ;
APKER, L .
PHYSICAL REVIEW, 1958, 110 (04) :876-878