ATOMIC LAYER EPITAXY OF CDSE/ZNSE SHORT-PERIOD SUPERLATTICES

Short period superlattices with structures of {(CdSe)n(ZnSe)10}m with n = 1-4 and m = 1-30 were grown on GaAs(100) substrates using an atomic layer epitaxy (ALE) method by alternately supplying Zn, Cd and Se source beams in a molecular beam epitaxy (MBE) system. The influence of source flux density, shutter opening duration, buffer layer thickness and substrate temperature has been studied. Satellite peaks due to the superlattice structures and subpeaks between the satellite peaks according to the Laue functions of the superlattices were observed in X-ray diffraction patterns. Photoluminescence (PL) due to the transitions in the CdSe quantum wells was observed. The well-width dependence of the PL peak energy is explained by the Kronig-Penney model.