GAAS LASER AMPLIFIERS

被引：34

作者：

KOSONOCKY, WF

CORNELY, RH

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1968年 / QE 4卷 / 04期

关键词：

D O I：

10.1109/JQE.1968.1075063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：125 / +

页数：1

共 12 条

[1] MEASUREMENT OF AMPLIFICATION IN A GAAS INJECTION LASER [J].

COUPLAND, MJ ;

HAMBLETON, KG ;

HILSUM, C .

PHYSICS LETTERS, 1963, 7 (04) :231-232

[2] SEMICONDUCTOR LASER AMPLIFIER [J].

CROWE, JW ;

AHEARN, WE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (08) :283-+

[3] SMALL-SIGNAL AMPLIFICATION IN GAAS LASERS - GAAS LASER DIODES SMALL SIGNAL AMPLIFICATION TRAVELING WAVE AMPLIFICATION 77 DEGREES K E/T [J].

CROWE, JW ;

CRAIG, RM .

APPLIED PHYSICS LETTERS, 1964, 4 (03) :57-&

[4] QUENCHING OF GALLIUM-ARSENIDE INJECTION LASERS [J].

FOWLER, AB .

APPLIED PHYSICS LETTERS, 1963, 3 (01) :1-3

[5] INTERACTIONS BETWEEN CLOSELY COUPLED GAAS INJECTION LASERS [J].

KELLY, CE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (01) :1-+

[6]

KOSONOCKY WF, 1965, 1964 S OPT EL INF PR, P269

[7]

KOSONOCKY WF, 1965, FEB DIG INT SOL CIRC, P48

[8]

MOSS TS, 1959, OPTICAL PROPERTIES S, P11

[9] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS [J].

PILKUHN, M ;

RUPPRECHT, H .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1243-&

[10]

STERN F, 1966, P PHYSICS QUANTUM EL

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