ON CONCENTRATION DEPENDENCES OF THE BAND PARAMETERS IN AIIBVI SOLID-SOLUTIONS WITH STRUCTURAL PHASE-TRANSITIONS

被引：12

作者：

ARESHKIN, AG

SUSLINA, LG

FEDOROV, DL

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 154卷 / 02期

关键词：

D O I：

10.1002/pssb.2221540220

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：609 / 621

页数：13

共 39 条

[1] ABLYAZOV NN, 1983, FIZ TVERD TELA+, V25, P353
[2] AKHEKYAN AM, 1985, KVANTOVAYA ELEKTRON+, V12, P1113
[3] ANANEVA GV, 1968, FIZ TVERD TELA, V10, P1800
[4] ARESHKIN AG, 1986, FIZ TVERD TELA+, V28, P3743
[5] ARESHKIN AG, 1985, P C PHYSICS SEMICO 1, P95
[6] AVEN M, 1967, PHYSICS CHEM 2 6 COM
[7] BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X
BALDERESCHI, A
MASCHKE, K
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 99 - 102
[8] ELECTRON-HOLE LIQUIDS IN POLAR SEMICONDUCTORS
BENI, G
RICE, TM
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (13) : 874 - 877
[9] BERCHENKO NN, 1982, A3B6 SOLID SOLUTIONS, P208
[10] BIR GL, 1971, FIZ TVERD TELA, V13, P3551