CONSIDERATIONS FOR RETRAPPING, COOLING, AND CRYSTALLIZING HIGHLY-CHARGED HIGH-Z IONS

The recent extraction of almost-equal-to 10(4) ions per pulse with both high charge and high atomic number Z from the electron beam ion trap (EBIT) encourages consideration of methods for retrapping and cooling these ions to approximately 4 K. Anticipated stored ion densities near this temperature should result in the formation of crystalline arrays of these ions in the trap. Standard techniques for pulsed injection of ions into the trap, followed by resistive damping of the translational motion and collisional cooling with cold charged particles, are expected to optimize the cooling process. Expected ion storage times based on extrapolated electron transfer collision rates are favorable. Interesting potential measurements suited to cold, highly-charged ions are also discussed.