NMOS RING OSCILLATORS WITH COBALT-SILICIDED P-DIFFUSED SHALLOW JUNCTIONS FORMED DURING THE POLY-PLUG CONTACT DOPING CYCLE

被引：6

作者：

VAIDYA, S

FULS, EN

JOHNSTON, RL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1321 / 1328

页数：8

共 18 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].

ALPERIN, ME ;

HOLLAWAY, TC ;

HAKEN, RA ;

GOSMEYER, CD ;

KARNAUGH, RV ;

PARMANTIE, WD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149

[2]

[Anonymous], COMMUNICATION

[3]

BOULIN DM, COMMUNICATION

[4]

CLEMENS JT, 1978, COMMUNICATION SEP

[5]

KUSHNER RA, 1982, MAY P SEM W, P7

[6] COSPUTTERED COBALT SILICIDES ON SILICON, POLYCRYSTALLINE SILICON, AND SILICON DIOXIDE [J].

MURARKA, SP ;

VAIDYA, S .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3404-3412

[7] LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION [J].

OHDOMARI, I ;

TU, KN ;

SUGURO, K ;

AKIYAMA, M ;

KIMURA, I ;

YONEDA, K .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1015-1017

[8]

Okabayashi H., 1983, International Electron Devices Meeting 1983. Technical Digest, P670

[9]

OSBORN CM, 1982, 1ST EL SOC P INT S V, P213

[10] DIFFUSION OF PHOSPHORUS IN TASI2 THIN-FILMS .2. LATTICE AND SHORT-CIRCUIT DIFFUSION IN TASI2/SIO2 [J].

PELLEG, J .

THIN SOLID FILMS, 1983, 110 (02) :129-138

← 1 2 →