EFFECTS OF THE EXCITON CONTINUUM ON RESONANT RAMAN-SCATTERING IN GAAS QUANTUM-WELLS

被引：6

作者：

WEN, GZ ^{[1
]}

CHANG, YC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LABS,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13562

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the exciton continuum on resonant Raman scattering in GaAs quantum wells is investigated. A k-space sampling technique is used to deal with exciton states, including the effects of valence-band mixing. Discrete and continuum exciton states are included in our calculation. We find that the resonant Raman spectra so obtained are in much better agreement with experiment compared with those that do not include the exciton continuum states.

引用

页码：13562 / 13565

页数：4

共 8 条

[1] CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES [J].