ANISOTROPY OF PENETRATION DEPTH IN SUPERCONDUCTING TIN

被引：19

作者：

TAI, PCL

BEASLEY, MR

TINKHAM, M

机构：

[1] HARVARD UNIV,DIV ENGN & APPL PHYS,CAMBRIDGE,MA 02138

[2] HARVARD UNIV,PHYS DEPT,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.11.411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：411 / 419

页数：9

共 27 条

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