EFFECT OF INVERSION SYMMETRY ON THE BAND-STRUCTURE OF SEMICONDUCTOR HETEROSTRUCTURES

被引:145
作者
EISENSTEIN, JP
STORMER, HL
NARAYANAMURTI, V
GOSSARD, AC
WIEGMANN, W
机构
关键词
D O I
10.1103/PhysRevLett.53.2579
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2579 / 2582
页数:4
相关论文
共 10 条
[1]  
BANGERT E, UNPUB
[2]  
BROIDO DA, 1984, UNPUB 17TH P INT C P
[3]  
EKENBERG U, 1984, PHYS REV B, V15, P18
[4]  
FASOLINO A, UNPUB
[5]  
FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331
[6]  
GOSSARD AC, 1983, TREATISE MATERIALS S, V24
[7]  
Kittel C., 1987, QUANTUM THEORY SOLID, V2nd ed.
[8]   INVERSION ASYMMETRY EFFECTS ON OSCILLATORY MAGNETORESISTANCE IN HGSE [J].
ROTH, LM ;
GROVES, SH ;
WYATT, PW .
PHYSICAL REVIEW LETTERS, 1967, 19 (10) :576-&
[9]   ENERGY STRUCTURE AND QUANTIZED HALL-EFFECT OF TWO-DIMENSIONAL HOLES [J].
STORMER, HL ;
SCHLESINGER, Z ;
CHANG, A ;
TSUI, DC ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1983, 51 (02) :126-129
[10]   RESOLUTION OF SHUBNIKOV-DE HAAS PARADOXES IN SI INVERSION-LAYERS [J].
VINTER, B ;
OVERHAUSER, AW .
PHYSICAL REVIEW LETTERS, 1980, 44 (01) :47-50