THE STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF INSB FILMS PREPARED BY METALORGANIC MAGNETRON SPUTTERING

被引：24

作者：

WEBB, JB ^{[1
]}

HALPIN, C ^{[1
]}

NOAD, JP ^{[1
]}

机构：

[1] COMMUN RES CTR,SPACE ELECTR DIRECTORATE,OTTAWA K2H 8S2,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2949 / 2953

页数：5

共 22 条

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[2]

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CHIANG, PK ;

BEDAIR, SM .

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[5] ELECTRICAL TRANSPORT PROPERTIES OF POLYCRYSTALLINE P-TYPE INSB FILMS [J].

DAWAR, AL ;

KRISHNA, KV ;

TANEJA, OP ;

MATHUR, PC .

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[6]

GOLDSTEIN JI, 1975, MICROPROBE ANAL

[7] STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF INSB THIN-FILMS GROWN BY RF SPUTTERING [J].

GREENE, JE ;

WICKERSHAM, CE .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3630-3639

[8]

HALLIWELL MAG, 1972, 1972 P S GAAS PITTSB, P98

[9] GROWTH-CHARACTERISTICS OF LPE INSB AND INGASB [J].

HOLMES, DE ;

KAMATH, GS .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) :95-110

[10]

KRESSEL H, 1982, SEMICONDUCTOR DEVICE, V39, P9

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