PREPARATION OF EPITAXIAL TLBA2CA2CU3O9 HIGH T(C) THIN-FILMS ON LAALO3 (100) SUBSTRATES

被引：12

作者：

PIEHLER, A ^{[1
]}

RESCHAUER, N ^{[1
]}

SPREITZER, U ^{[1
]}

STROBEL, JP ^{[1
]}

SCHONBERGER, R ^{[1
]}

RENK, KF ^{[1
]}

SAEMANNISCHENKO, G ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,D-91058 ERLANDGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial TlBa2Ca2Cu3O9 high T(c) thin films were prepared on LaAlO3 (100) substrates by a combination of laser ablation and thermal evaporation of thallium oxide. X-ray diffraction patterns of theta-2theta scans showed that the films consisted of highly c axis oriented TlBa2Ca2Cu3O9. Phi scan measurements revealed an epitaxial growth of the TlBa2Ca2CU3O9 thin films on the LaAlO3 (100) substrates. Ac inductive measurements indicated the onset of superconductivity at 110 K. At 6 K, the critical current density was 4 X 10(6) A/cm2 in zero magnetic field and 6 X 10(5) A/CM2 at a magnetic field of 3 T parallel to the c axis.

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页码：1451 / 1453

页数：3

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