SOLID-STATE REACTION-MEDIATED LOW-TEMPERATURE BONDING OF GAAS AND INP WAFERS TO SI SUBSTRATES

被引：6

作者：

MA, Z ^{[1
]}

ZHOU, GL ^{[1
]}

MORKOC, H ^{[1
]}

ALLEN, LH ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.111008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a low-temperature wafer bonding method for the realization of integration of GaAs- and InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280-300 degrees C by taking advantage of the low-temperature solid-state reactions occurring at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. Both the simple mechanical test and standard thermal cycling test prove excellent structural integrity of the joined wafers. Structural analyses reveal only limited interfacial reactions as well as solid-phase epitaxial regrowth of GeSi alloys on the Si substrate.

引用

页码：772 / 774

页数：3

共 12 条

[1] HYBRID INTEGRATION OF BIPOLAR-TRANSISTORS AND MICROLASERS - CURRENT-CONTROLLED MICROLASER SMART PIXELS [J].