EFFECT OF CARBON AND BORON ON THE HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE

被引：36

作者：

FERGUS, JW ^{[1
]}

WORRELL, WL ^{[1
]}

机构：

[1] UNIV PENN,DEPT MAT SCI & ENGN,PHILADELPHIA,PA 19104

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1995年 / 78卷 / 07期

关键词：

D O I：

10.1111/j.1151-2916.1995.tb08918.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon carbide has good oxidation resistance, due to the formation of a protective silica layer, Although amorphous silica is an excellent oxygen barrier, it is very sensitive to impurity elements, which affect its viscosity, oxygen diffusivity, and crystallization kinetics. This paper compares the oxidation rates of CVD SIG, sintered alpha-SiC, and CVD SiC-coated graphite in 1 atm oxygen at 1500 degrees C to determine the effects of small additions of boron and carbon, The formation of bubbles in the silica scale formed on sintered alpha-SiC in oxygen between 1230 degrees and 1550 degrees C is also discussed.

引用

页码：1961 / 1964

页数：4

共 20 条

[1]

BROWNING R, 1987, ADV CERAM MATER, V2, P773

[2] VITREOUS BORON OXIDE - DRYING AND MOISTURE ABSORPTION [J].