CHARGE COLLECTION MEASUREMENTS FOR ENERGETIC IONS IN SILICON

被引：16

作者：

CAMPBELL, AB

KNUDSON, AR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2067 / 2071

页数：5

共 12 条

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[2]

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[3]

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[7] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4017-4021

[8]

MCLEAN FB, UNPUB ELECTRON DEVIC

[9] COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2024-2031

[10] IONIZATION OF SIO2 BY HEAVY CHARGED-PARTICLES [J].

OLDHAM, TR ;

MCGARRITY, JM .

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