RAMAN-SPECTROSCOPY FOR NONDESTRUCTIVE DEPTH PROFILE STUDIES OF ION-IMPLANTATION IN SILICON

被引：8

作者：

DEWILTON, AC ^{[1
]}

SIMARDNORMANDIN, M ^{[1
]}

WONG, PTT ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DIV CHEM,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 05期

关键词：

D O I：

10.1149/1.2108783

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：988 / 993

页数：6

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