CONTROLLED VAPOR-LIQUID-SOLID GROWTH OF SILICON CRYSTALS

被引：50

作者：

WAGNER, RS

DOHERTY, CJ

机构：

来源：

关键词：

D O I：

10.1149/1.2423810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1300 / &

共 10 条

[1]

BELL TEL LAB INC M, URRAY HILL

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[3]

PFANN WG, 1966, ZONE MELTING, P254

[4] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J].

SHEPHERD, WH .

[5] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .

[6] FORMATION OF CRYSTAL NUCLEI IN LIQUID METALS [J].

TURNBULL, D .

WAGNER, RS ;

ELLIS, WC .

[8]

WAGNER RS, 1965, T METALL SOC AIME, V233, P1053

[9]

WAGNER RS, 1965, JOM-J MIN MET MAT S, V17, P1031

[10]

WAGNER RS, UNPUBLISHED WORK