RECENT ADVANCES IN ULTRA-HIGH-SPEED HEMT TECHNOLOGY

被引：24

作者：

ABE, M ^{[1
]}

MIMURA, T ^{[1
]}

NISHIUCHI, K ^{[1
]}

SHIBATOMI, A ^{[1
]}

KOBAYASHI, M ^{[1
]}

机构：

[1] FUJITSU LABS LTD,DIV SEMICOND,COMPOUND SEMICOND DEVICES LAB,ATSUGI 24301,JAPAN

来源：

关键词：

D O I：

10.1109/JQE.1986.1073175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1870 / 1879

页数：10

共 25 条

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[10] HENDEL RH, 1985, ELECTRON, P22