DENSITY-OF-STATES AND TUNNELING PHENOMENA IN DEGENERATE FERROMAGNETIC SEMICONDUCTORS

被引:11
作者
AUSLENDER, MI
IRKHIN, VY
机构
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D O I
10.1016/0038-1098(85)90782-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:701 / 703
页数:3
相关论文
共 7 条
[1]  
Al'tshuler B. L., 1979, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V77, P2028
[2]   THE SPIN POLARIZATION OF CONDUCTION ELECTRONS IN FERROMAGNETIC SEMICONDUCTORS [J].
AUSLENDER, MI ;
IRKHIN, VY .
SOLID STATE COMMUNICATIONS, 1984, 50 (11) :1003-1005
[3]   ELECTRON-STATES IN THE S-F EXCHANGE MODEL OF A FERROMAGNETIC SEMICONDUCTOR IN THE SPIN-WAVE REGION .2. DEGENERATE SEMICONDUCTORS [J].
AUSLENDER, MI ;
IRKHIN, VY .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (18) :3533-3545
[4]  
BURSTEIN E, 1963, TUNNELING PHENOMENA
[5]   ELECTRON-MAGNON INTERACTIONS IN ITINERANT FERROMAGNETISM .2. STRONG FERROMAGNETISM [J].
EDWARDS, DM ;
HERTZ, JA .
JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (12) :2191-2205
[6]  
IRKHIN VY, 1985, J PHYS C, V18
[7]  
MAHAN GD, 1981, MANY PARTICLE PHYSIC