ELECTROOPTIC SAMPLING USING AN EXTERNAL GAAS PROBE TIP

被引：20

作者：

SHINAGAWA, M

NAGATSUMA, T

机构：

[1] NTT LSI Laboratories, Kanagawa Pref, 3-1, Morinosato Wakamiya, Atsugi-Shi

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 17期

关键词：

Electro-optics; Gallium arsenide;

D O I：

10.1049/el:19900864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first laser-diode-based external electro-optic (EO) sampling using a GaAs probe tip is described. This tip is a longitudional electric field sensor, being therefore immune from optical crosstalk. The minimum detectable voltage is 16 mV/y/(Hz). The EO sampling is compared with that of a conventional electrical sampling oscilloscope, and the two are shown to be in excellent agreement. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1341 / 1343

页数：3

共 6 条

[1] SENSITIVITY OF DIRECT ELECTRO-OPTIC SAMPLING TO ADJACENT SIGNAL LINES [J].