CD AND TE DISLOCATIONS IN CDTE

被引:39
作者
INOUE, M
TAKAYANAGI, S
TERAMOTO, I
机构
关键词
D O I
10.1063/1.1702621
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:404 / &
相关论文
共 7 条
[1]  
GATOS HC, PRIVATE COMMUNICATIO
[2]   ETCH PITS AND POLARITY IN CDTE CRYSTALS [J].
INOUE, M ;
TAKAYANAGI, S ;
TERAMOTO, I .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2578-&
[3]  
LAVINE MC, 1962, J ELECTROCHEM SOC, V108, P974
[4]   ARRANGEMENTS OF DISLOCATIONS IN PLASTICALLY BENT SILICON CRYSTALS [J].
PATEL, JR .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) :170-176
[5]   DISLOCATIONS AND SELECTIVE ETCH PITS IN INSB [J].
VENABLES, JD ;
BROUDY, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1025-1028
[6]  
VOGEL FL, 1956, J MET, V8, P946
[7]   CRYSTALLOGRAPHIC POLARITY IN II-VI COMPOUNDS [J].
WAREKOIS, EP ;
MARIANO, AN ;
GATOS, HC ;
LAVINE, MC .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :690-&