STRUCTURAL MODEL OF AMORPHOUS-SILICON NITRIDE

被引：11

作者：

OHDOMARI, I

YAMAKOSHI, Y

KAMEYAMA, T

AKATSU, H

机构：

[1] Waseda Univ, Tokyo, Jpn, Waseda Univ, Tokyo, Jpn

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 89卷 / 03期

关键词：

D O I：

10.1016/S0022-3093(87)80273-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SILICON NITRIDE

引用

页码：303 / 310

页数：8

共 10 条

[1] X-RAY-DIFFRACTION STUDY OF THE AMORPHOUS STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE [J].

AIYAMA, T ;

FUKUNAGA, T ;

NIIHARA, K ;

HIRAI, T ;

SUZUKI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 33 (02) :131-139

[2] SYSTEMATIC GENERATION OF RANDOM NETWORKS [J].

DUFFY, MG ;

BOUDREAUX, DS ;

POLK, DE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :435-454

[3] REFINEMENT OF A RANDOM NETWORK MODEL FOR VITREOUS SILICON DIOXIDE [J].

GASKELL, PH ;

TARRANT, ID .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02) :265-286

[4]

ISHII N, 1985, 17TH P ICPS, P921

[5] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[6] STRUCTURE CHARACTERIZATION OF CVD AMORPHOUS SI3N4 BY PULSED NEUTRON TOTAL SCATTERING [J].

MISAWA, M ;

FUKUNAGA, T ;

NIIHARA, K ;

HIRAI, T ;

SUZUKI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (03) :313-321

[7] A STRUCTURAL MODEL FOR THE INTERFACE BETWEEN AMORPHOUS AND (100) CRYSTALLINE SILICON [J].

SAITO, T ;

OHDOMARI, I .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (04) :673-687

[8]

SAITO T, 1984, 1983 P MAT RES SOC S, P531

[9]

SAITO T, 1985, 1983 P US JAP SEM SO, P171

[10]

SZE SM, 1983, VLSI TECHNOLOGY, P119

← 1 →