SEMI-INSULATING SILICON-NITRIDE (SINSIN) AS A RESISTIVE FIELD SHIELD

被引：17

作者：

OSENBACH, JW ^{[1
]}

KNOLLE, WR ^{[1
]}

机构：

[1] AT&T BELL LABS,READING,PA 19612

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/16.106248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed plasma-deposited semi-insulating silicon nitride (SinSiN) as a resistive sea passivation. In this paper we briefly review its properties, then we review how it can be used as a resistive sea. Finally, we show that SinSiN can be used to improve the breakdown voltage of a high-voltage device by some 20 to 40 V by screening all surface charges. We further show that SinSiN provides device immunity to surface charges, thereby improving yield and reliability. © 1990 IEEE

引用

页码：1522 / 1528

页数：7

共 26 条

[1]

[Anonymous], 1971, JANAF THERMOCHEMICAL

[2]

Atalla M., 1959, PROC IEE B ELECT COM, V106, P1130, DOI [10.1049/pi-b-2.1959.0204, DOI 10.1049/PI-B-2.1959.0204]

[3]

BEAN KE, 1977, J ELECTROCHEM SOC, V124, P50

[4]

CANG KT, 1987, FALL M MAT RES SOC

[5]

COMIZZOLI RB, 1987, P S HIGH VOLTAGE SMA, P263

[6]

COMIZZOLI RB, 1987, P S HIGH VOLTAGE SMA, P232

[7]

COMIZZOLI RB, 1977, J ELECTROCHEM SOC, V124, P1048

[8]

Hartman A. R., 1981, International Electron Devices Meeting, P250

[9] CHARGE MOTION ON SILICON OXIDE SURFACES [J].

HO, P ;

LEHOVEC, K ;

FEDOTOWSKY, L .

SURFACE SCIENCE, 1967, 6 (04) :440-+

[10]

KANG KD, 1965, RADCTR6535 FIN REP

← 1 2 3 →