INTLSB - AN INFRARED DETECTOR MATERIAL

被引：38

作者：

VANSCHILFGAARDE, M ^{[1
]}

SHER, A ^{[1
]}

CHEN, AB ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In1-xTlxSb is proposed as promising infrared material. A number of optical and structural properties are studied within local density-functional theory. The alloy at x = 0.09 is estimated to have a gap of 0.1 eV. Although T1Sb is found to favor the CsCl structure, the zinc blende alloy is stable for low x values. A phase diagram is calculated to estimate the regions of stable phases and explore the conditions for growing narrow-gap In1-xTlxSb alloys.

引用

页码：1857 / 1859

页数：3

共 13 条

[1] INFRARED MATERIAL REQUIREMENTS FOR THE NEXT GENERATION OF SYSTEMS
BALCERAK, R
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) : C1 - C5
[2] STRUCTURAL-PROPERTIES OF BISMUTH-BEARING SEMICONDUCTOR ALLOYS
BERDING, MA
SHER, A
CHEN, AB
MILLER, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) : 107 - 115
[3] EVGENEV SB, 1985, INORG MATER+, V21, P1747
[4] FEDOROV VI, 1970, TEPLOFIZ VYS TEMP, V8, P447
[5] LONG-WAVELENGTH 128 X 128 GAAS QUANTUM-WELL INFRARED PHOTODETECTOR ARRAYS
LEVINE, BF
BETHEA, CG
GLOGOVSKY, KG
STAYT, JW
LEIBENGUTH, RE
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) : C114 - C119
[6] METHFESSEL M, UNPUB
[7] III-V STRAINED LAYER SUPPERLATTICES FOR LONG-WAVELENGTH DETECTOR APPLICATIONS - RECENT PROGRESS
OSBOURN, GC
DAWSON, LR
BIEFELD, RM
ZIPPERIAN, TE
FRITZ, IJ
DOYLE, BL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3150 - 3152
[8] PHASE EQUILIBRIUM AND THERMODYNAMIC ANALYSIS OF SYSTEM ANTIMON-THALLIUM
PREDEL, B
SCHWERMANN, W
[J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1970, A 25 (06): : 877 - +
[9] HGCDTE STATUS REVIEW WITH EMPHASIS ON CORRELATIONS, NATIVE DEFECTS AND DIFFUSION
SHER, A
BERDING, MA
VANSCHILFGAARDE, M
CHEN, AB
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) : C59 - C70
[10] SOROKINA OV, 1983, RUSS J INORG CHEM, V28, P916

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