OXYGEN-CONTROLLED CONDUCTION IN THIN FILMS OF CUPROUS IODIDE - A MIXED VALENCY ANION SEMICONDUCTOR

被引：20

作者：

HERRICK, CS

TEVEBAUGH, AD

机构：

来源：

关键词：

D O I：

10.1149/1.2425687

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：119 / 121

页数：3

共 10 条

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[4] Gudden B, 1935, PHYS Z, V36, P717
[5] LYON DA, 1955, Patent No. 2704265
[6] DEVIATIONS FROM STOICHIOMETRIC PROPORTIONS IN CUPROUS IODIDE
MAURER, RJ
[J]. JOURNAL OF CHEMICAL PHYSICS, 1945, 13 (08) : 321 - 326
[7] NAGEL K, 1934, Z PHYS CHEM B-CHEM E, V25, P71
[8] VINE BH, 1951, Z PHYS CHEM, V198, P147
[9] WEISS K, 1957, Z PHYS CHEM, V12, P68
[10] 1956, Patent No. 2756165