PARALLEL AND PERPENDICULAR TRANSPORT IN SI/COSI2 AND SI/COSI2/SI HETEROSTRUCTURES

It has recently become possible to grow epitaxial Si/CoSi//2/Si semiconductor-metal-semiconductor heterostructures of almost perfect crystalline quality. Electronic transport in the plane of the metal film and (parallel transport) is investigated by the extensive studies of resistivity and superconducting properties of these films. The sharp influence of film thickness on both phenomena is presented and its physical origin is briefly discussed. The transfer of hot electrons emitted by the top Si//e//p//i/CoSi//2 diode to the Si//b//u//1//k/CoSi//2 through the metal film (perpendicular transport) is studied. Experimental data strongly favor the hypothesis of ballistic transport with a ballistic mean free path close to the one deduced from resistivity measurements.