1ST-ORDER PHASE-TRANSITION IN A LASER THRESHOLD

被引:4
作者
DEPPE, DG
HUFFAKER, DL
ROGERS, TJ
LEI, C
HUANG, Z
STREETMAN, BG
机构
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
关键词
D O I
10.1063/1.106758
中图分类号
O59 [应用物理学];
学科分类号
摘要
A mechanism for achieving a first-order phase transition in the threshold characteristics of a laser is discussed, and data demonstrating the effect are presented. It is suggested that a first-order phase transition can be realized through the design of a laser active region if the gain medium is localized to a spatial region with longitudinal dimensions much less than the wavelength of the resulting laser light. Evidence of the first-order phase transition is presented in the spontaneous emission characteristics of a microcavity semiconductor laser, which shows a decrease in the separation energy of the quasi-Fermi levels at threshold, along with hysteresis in the light versus current characteristics.
引用
收藏
页码:3081 / 3083
页数:3
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