QUALITY OF ALAS-LIKE AND INSB-LIKE INTERFACES IN INAS/ALSB SUPERLATTICES - AN OPTICAL STUDY

被引：39

作者：

SPITZER, J ^{[1
]}

FUCHS, HD ^{[1
]}

ETCHEGOIN, P ^{[1
]}

IIG, M ^{[1
]}

CARDONA, M ^{[1
]}

BRAR, B ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two short-period InAs/AlSb superlattices, grown with an AlAs-like interface and an InSb-like interface, respectively, were studied with Raman spectroscopy, x-ray diffraction, and ellipsometry. Our measurements show that the InSb-like interface grows perfectly pseudomorphically, whereas the sample with the AlAs-like interface shows indications of relaxation and As interdiffusion. This different interface quality seems to be a fundamental problem, rather than the result of the growth technique.

引用

页码：2274 / 2276

页数：3

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