METAL-OXIDE-SEMICONDUCTOR NO2 SENSOR

被引：69

作者：

INOUE, T

OHTSUKA, K

YOSHIDA, Y

MATSUURA, Y

KAJIYAMA, Y

机构：

[1] Figaro Engineering Inc., Minoo-shi, Osaka, 562, Senba-nishi

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 25卷 / 1-3期

关键词：

METAL OXIDE SEMICONDUCTOR; NITROGEN DIOXIDE SENSOR;

D O I：

10.1016/0925-4005(95)85087-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A newly developed sensor for NO2 has been investigated from a practical point of view. Various metal oxide semiconductors have been examined and as a result it is found that WO3 shows the highest potentiality as an NO2 sensor for air-quality monitoring. Several approaches, such as introducing SiO2 binder, microprocessing techniques, heat-cleaning techniques and adopting a filter material, have been carried out, and consequently the performance of the WO3 sensor for NO2 is improved enough for practical use.

引用

页码：388 / 391

页数：4

共 7 条

[1] TUNGSTEN OXIDE-BASED SEMICONDUCTOR SENSOR HIGHLY SENSITIVE TO NO AND NO2 [J].