A TWO-DIMENSIONAL DEVICE SIMULATOR OF SEMICONDUCTOR-LASERS

被引：66

作者：

OHTOSHI, T ^{[1
]}

YAMAGUCHI, K ^{[1
]}

NAGAOKA, C ^{[1
]}

UDA, T ^{[1
]}

MURAYAMA, Y ^{[1
]}

CHINONE, N ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 06期

关键词：

SEMICONDUCTOR DEVICES - Heterojunctions;

D O I：

10.1016/0038-1101(87)90222-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional simulator for aid in designing semiconductor lasers is developed. Poisson's equation and the current continuity equations for electrons and holes as well as the wave equation and rate equation for photons are numerically solved. Heterojunctions and carrier degeneracy are treated, and analytical results on channeled-substrate-planar lasers are presented to demonstrate the simulator. Agreement is found between calculated and experimental results; the calculated results clarify the operation mechanism of semiconductor lasers. The present work enables computer simulation to be a practical design aid in research and development of various kinds of semiconductor lasers.

引用

页码：627 / 638

页数：12

共 35 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].