CR DOPING INFLUENCE IN ZNS SINGLE-CRYSTALS ON THE COMPLEX DISORDERED POLYTYPICAL STRUCTURE

被引:8
作者
GOSK, J
KOZIELSKI, MJ
机构
[1] Institute of Physics, Warsaw Technical University, Warszawa, 00-662
关键词
D O I
10.1002/crat.2170250413
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The results of X‐ray investigation of real structures of ZnS:Cr single crystals are presented. Doped ZnS single crystals were grown from the melt by Bridgman's high pressure method. Cr dopant converts the structure of ZnS crystals from 3C with individual stacking faults (for pure ZnS) to the complex polytypical structures disordered along one dimension and including specific orderings of cp layers that form polytype cells LH (L = 2l, l = 2, 3, 4 and 5). The structures are characterised by Farkas‐Jahnkes statistical parameters π(m, p) and by parameters PLH of the polytype unit cell formation probability (Kozielski, Tomaszewicz 1986; Palosz, Przedmojski). Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:415 / 419
页数:5
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