STRUCTURAL DAMAGE AT THE SI/SIO2 INTERFACE RESULTING FROM ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES

被引：19

作者：

MIKAWA, RE

LENAHAN, PM

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 552

页数：3

共 14 条

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[7] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J].

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[8]

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