EXACT LINEAR ADMITTANCE OF N+-N-N+ SEMICONDUCTOR STRUCTURES

被引：8

作者：

ERANEN, S ^{[1
]}

SINKKONEN, J ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,ELECTRON PHYS LAB,SF-02150 ESPOO 15,FINLAND

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5447 / 5448

页数：2

共 8 条

[1]

Ashcroft N. W., 1976, SOLID STATE PHYS, P244

BARKER, JR ;

FERRY, DK ;

GRUBIN, HL .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :209-210

[3]

BRANAGER HU, 1984, PHYS REV B, V30, P7349

[4] IMPEDANCE OF THIN SEMICONDUCTOR-FILMS IN LOW ELECTRIC-FIELD [J].

LEE, K ;

SHUR, MS .

[5] KINETIC INTEGRAL SOLUTIONS OF BOLTZMANN EQUATION [J].

MACCALLUM, C .

PHYSICAL REVIEW, 1963, 132 (02) :930-&

[6] LINDHARD DIELECTRIC FUNCTION IN RELAXATION-TIME APPROXIMATION [J].

MERMIN, ND .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (05) :2362-+

[7] LINEAR CONDUCTANCE OF SHORT SEMICONDUCTOR STRUCTURES [J].

SINKKONEN, J ;

ERANEN, S ;

STUBB, T .

PHYSICAL REVIEW B, 1984, 30 (08) :4813-4815

[8] CONDUCTION IN SHORT SEMICONDUCTOR STRUCTURES [J].

SINKKONEN, J .