SILICON THERMOOPTIC MICROMODULATOR WITH 700-KHZ - 3-DB BANDWIDTH

被引：68

作者：

COCORULLO, G

IODICE, M

RENDINA, I

SARRO, PM

机构：

[1] UNIV CALABRIA, DIPARTIMENTO INGN ELETTRON INFORMAT & SISTEMIST, I-87036 RENDE, ITALY

[2] DELFT UNIV TECHNOL, DIMES, 2600 GB DELFT, NETHERLANDS

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 04期

关键词：

D O I：

10.1109/68.376803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon Fabry-Perot waveguide modulator, operating at the fiber optic communication wavelengths of 1.3 and 1.55 mum, has been entirely fabricated using microelectronic techniques. The planar optical cavity has been defined by plasma etching and has a length of 100 mum. The device, based on the thermooptic effect, is electrically driven and exhibits a maximum modulation depths of 60%. The measured -3 dB bandwidth is 700 kHz, which is by far the best result ever reported, to our knowledge, for thermooptic effect based modulators.

引用

页码：363 / 365

页数：3

共 5 条

[1]

CHAO HC, 1992, P SOC PHOTO-OPT INS, V1779, P164, DOI 10.1117/12.140953

[2]

COCORULLO G, 1994, OPT LETT, V19, P420

[3] NEW POSSIBILITIES FOR EFFICIENT SILICON INTEGRATED ELECTROOPTICAL MODULATORS [J].