THE INCLUSION OF MULTIPLE REFLECTIONS IN THE FORMULATION OF THE FARADAY EFFECT IN SEMICONDUCTORS

被引：14

作者：

DONOVAN, B

MEDCALF, T

机构：

来源：

PHYSICS LETTERS | 1963年 / 7卷 / 05期

关键词：

D O I：

10.1016/0031-9163(63)90046-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：304 / 306

页数：3

共 7 条

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[2] NOTE ON FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS
DONOVAN, B
WEBSTER, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (511): : 1081 - &
[3] FARADAY EFFECT IN NON-DEGENERATE SEMICONDUCTORS
DONOVAN, B
WEBSTER, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503): : 120 - &
[4] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM
FURDYNA, JK
BROERSMA, S
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1995 - 2003
[5] PALIK ED, 1962, P INT C PHYS SEM I P, P288
[6] Stratton J. A, 1941, ELECTROMAGNETIC THEO, P511
[7] FARADAY ROTATION OF GUIDED WAVES
SUHL, H
WALKER, LR
[J]. PHYSICAL REVIEW, 1952, 86 (01): : 122 - 123