EFFECT OF THE ELECTRON ELECTRON INTERACTION ON THE BAND-STRUCTURE OF SEMICONDUCTORS

被引：3

作者：

BREY, L

TEJEDOR, C

机构：

[1] Univ Autonoma de Madrid, Dep de, Fisica del Estado Solido, Madrid,, Spain, Univ Autonoma de Madrid, Dep de Fisica del Estado Solido, Madrid, Spain

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 12期

关键词：

BAND STRUCTURE - ELECTRONS - SEMICONDUCTING SILICON;

D O I：

10.1016/0038-1098(85)90140-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Many-body effects in a semiconductor are taken into account by means of an approximation to the self-energy of the system. The analysis of the Coulomb-hole contribution suggests a description of this term by means of a local density dependent potential. Non-locality, frequency and a small local density dependences are included in the screened exchange part of the self-energy. The method gives satisfactory results for the band structure of silicon.

引用

页码：1093 / 1096

页数：4

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