SCHOTTKY-BASED BAND LINEUPS FOR REFRACTORY SEMICONDUCTORS

被引：57

作者：

WANG, MW ^{[1
]}

MCCALDIN, JO ^{[1
]}

SWENBERG, JF ^{[1
]}

MCGILL, TC ^{[1
]}

HAUENSTEIN, RJ ^{[1
]}

机构：

[1] OKLAHOMA STATE UNIV,DEPT PHYS,STILLWATER,OK 74078

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS.© 1995 American Institute of Physics.

引用

页码：1974 / 1976

页数：3

共 41 条

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