DRY DEVELOPMENT OF THE DESIRE PROCESS IN A DECR REACTOR

被引：4

作者：

DIJKSTRA, J

VANDEVEN, G

KALTER, H

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90132-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion currents to the substrate holder in a Distributed Electron Cyclotron Resonance etcher are maximum at a pressure of 0.15 Pa in oxygen plasmas. The ion current is strongly enhanced by changing the magnet configuration. In the pressure region of maximum ion current, the etching characteristics of oxygen plasmas for dry development of the DESIRE process are measured. The etch selectivity between silylated and unsilylated resist and the lithographic contrast increase with decreasing ion-bombardment energy. From trilevel etching it is found that wafer cooling is important for profile control. Some characteristics of 0.5-mu-m DESIRE patterns made with i-line 0.42 NA exposure are shown.

引用

页码：455 / 458

页数：4

共 8 条

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