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TEMPERATURE DEPENDENCES OF ELECTRICAL PARAMETERS OF SEMIINSULATING GAAS DETERMINED FROM GALVANOMAGNETIC MEASUREMENTS

被引：5
作者：
BETKO, J
MERINSKY, K
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1986年 / 93卷 / 02期
关键词：
D O I：
10.1002/pssa.2210930262
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K205 / K209
页数：5
相关论文
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[3]  
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[4]   DETERMINATION OF THE ELECTRICAL-PROPERTIES OF SEMI-INSULATING GAAS - ROLE OF THE MAGNETIC-FIELD DEPENDENCES OF SINGLE-CARRIER PARAMETERS [J].
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[7]  
HRIVNAK L, 1982, SEMIINSULATING 3 5 M, P139
[8]   STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J].
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