DFB-LD/MODULATOR INTEGRATED LIGHT-SOURCE BY BANDGAP ENERGY CONTROLLED SELECTIVE MOVPE

被引：61

作者：

KATO, T

SASAKI, T

KOMATSU, K

MITO, I

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki, Kanagawa 216

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

INTEGRATED OPTICS; LIGHT SOURCES; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19920095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The bandgap energy of an In/InP multiquantum well structure, selectively grown by MOVPE, was controlled along the waveguide direction by controlling the mask stripe width. A butt-jointless DFB-LD/modulator light source was fabricated by using this technique.

引用

页码：153 / 154

页数：2

共 6 条

[1] LATERAL AND LONGITUDINAL PATTERNING OF SEMICONDUCTOR STRUCTURES BY CRYSTAL-GROWTH ON NONPLANAR AND DIELECTRIC-MASKED GAAS SUBSTRATES - APPLICATION TO THICKNESS-MODULATED WAVE-GUIDE STRUCTURES
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[2] SELECTIVE AREA MOVPE OF GAINAS/INP HETEROSTRUCTURES ON MASKED AND NONPLANAR (100) AND (111) SUBSTRATES
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[3] KATO T, 1991, ECOC 91, P429
[4] HIGH-POWER AND HIGH-SPEED SEMI-INSULATING BH STRUCTURE MONOLITHIC ELECTROABSORPTION MODULATOR DFB LASER-LIGHT SOURCE
SODA, H
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SATO, K
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[J]. ELECTRONICS LETTERS, 1990, 26 (01) : 9 - 10
[5] SUBVOLT OPERATION OF ELECTROABSORPTION MODULATOR INTEGRATED WITH LAMBDA/4-SHIFTED DFB LASER FOR 2.4 GBIT/S 135KM TRANSMISSION
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[J]. ELECTRONICS LETTERS, 1991, 27 (04) : 390 - 391
[6] Yamaguchi M., 1990, 12TH IEEE INT SEM LA, P160

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