ELECTRIC-FIELD-INDUCED ROOM-TEMPERATURE DOPING IN CUINSE2

被引：9

作者：

JAKUBOWICZ, A

DAGAN, G

SCHMITZ, C

CAHEN, D

机构：

[1] Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot

[2] IBM Research Divn, Zürich Research Lab, Ruschlikon

[3] Iset, Kassel

来源：

ADVANCED MATERIALS | 1992年 / 4卷 / 11期

关键词：

D O I：

10.1002/adma.19920041107

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe2 sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.) Copyright © 1992 Verlag GmbH & Co. KGaA, Weinheim

引用

页码：741 / 745

页数：5

共 35 条

[1] A CHEMICAL APPROACH FOR THE MICROSCOPIC MECHANISM OF FAST ION-TRANSPORT IN SOLIDS [J].