PHOTOLUMINESCENCE OF GA-DOPED ZNSE AND AS-DOPED ZNSE

被引：2

作者：

ETIENNE, D ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CTR ETUD ELECTR SOLIDES,CNRS,PL E BATAILLON,34060 MONTPELLIER,FRANCE

来源：

关键词：

D O I：

10.1016/0025-5408(75)90098-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1365 / 1372

页数：8

共 12 条

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[10] PHOSPHORUS AND ARSENIC IMPURITY CENTERS IN ZNSE .2. OPTICAL AND ELECTRICAL PROPERTIES
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